不同退火温度下Zn_(0.96)Co_(0.04)O薄膜的磁性研究  

Study on Magnetic Properties of Zn_(0.96)Co_(0.04)O Films after Different Annealing Temperature

作　　者：刘永刚[1] 杨东洋[1] 

机构地区：[1]中国地质大学(北京)地球物理与信息技术学院,北京100083

出　　处：《材料导报（纳米与新材料专辑）》2011年第1期91-92,112,共3页

摘　　要：通过对磁控溅射方法制备的Zn_(0.96)Co_(0.04)O薄膜退火前后结构和磁性的研究发现,Co进入ZnO的晶格中并取代了Zn的位置,形成稀磁半导体结构,显示了室温铁磁性。后期真空退火可以产生更多的氧空位,提高BMP之间发生交叠的几率,从而使磁矩增大。因此可以认为氧空位是产生磁性的必要条件,其磁性来源机制符合J.M.D.Coey的BMP模型。The studying of the crystalline structures and magnetic properties of Zn0. 96 Coo. o40 films were formed by magnetron sputtering method shows that Co^2＋ substitute for Zn^2＋ in the tetrahedral configuration without destroying the wurzite structure of ZnO. The post-annealing treatment will form more oxygen vacancies, which act as the bound magnetic polarons and mediate the exchange of ferromagnetism. The results suggest that the oxygen vacancy plays an important role in the origin of ferromagnetism and the magnetic mechanism of ZnO-based DMSs follows the BMP theory.

关 键 词：Zno.96Coo.040稀磁半导体薄膜高温退火磁性 

分 类 号：TB383[一般工业技术—材料科学与工程]