硅中氧氮扩散研究进展  

Diffusivity of Oxygen and Nitrogen in Silicon

作　　者：税琼[1] 樊瑞新[1] 杨德仁[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《半导体技术》1999年第6期1-6,共6页Semiconductor Technology

摘　　要：着重探讨了氧的低温异常扩散现象， 研究了氮在高温下扩散速率、扩散机理方面的进展，The enhanced oxygen diffusion at lower temperatures is discussed.In addition,the diffusivity and mechanism of nitrogen is also previewed during annealing at high temperatures.Furthermore,the paper discusses some unsolven problems at present.

关 键 词：扩散 杂质 硅 

分 类 号：TN304.12[电子电信—物理电子学] O474[理学—半导体物理]