1kA高功率脉冲磁控溅射电源研制及试验研究  被引量:10

Development of 1kA high power pulsed magnetron sputtering power supply

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作  者:桂刚[1] 田修波[1] 朱宗涛[1] 吴忠振[1] 巩春志[1] 杨士勤[1] 

机构地区:[1]哈尔滨工业大学现代焊接与连接国家重点实验室,黑龙江哈尔滨150001

出  处:《真空》2011年第4期46-50,共5页Vacuum

基  金:国家自然科学基金(10905013)

摘  要:高功率脉冲磁控溅射(HPPMS)以其在真空镀膜上更大的优势而越来越受到重视,高压大电流电源是实现HPPMS的关键因素。本文研制了1000 A高功率脉冲磁控溅射电源,给出了电源框架图和主电路拓扑结构图。对脉冲部分采用仿真分析探索大模块IGBT的不均流因素,结果表明驱动一致性是影响均流的关键原因之一;分析了大电流时IGBT两端电压过冲问题,采用RCD吸收和续流回路能有效抑制电压过冲,使电压过冲在正常安全范围内。用所研制的电源进行等离子体负载实验,运行良好,为性能优异薄膜的制备奠定硬件基础。A power supply with maximum output pulse current of 1000A was developed for high power pulsed magnetron sputtering (HPPMS) in this paper. Diagrammatic sketch and circuit topology of the power system were presented. The main pulse circuit was analyzed with PSpice simulation program and synchronization of IGBT driver is the key factor of parallel current sharing. RCD absorbing and freewheeling circuit were used to reduce overshoot voltage of IGBT. Practical experiments demonstrate that the newly developed power supplL can satisfy the HPPMS application with current of 1000A. The brighter glow discharge was observed during HPPMS than that during common direct-current magnetron sputtering (DCMS). This may lead to better surface properties of deposited films.

关 键 词:HPPMS 1000A电源研制 逆变 并联均流 电压过冲 

分 类 号:TN86[电子电信—信息与通信工程]

 

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