PEM控制中频反应磁控溅射制备TiO_2薄膜的研究  

Study on the TiO_2 films deposited by medium-frequency reactive magnetron sputtering under PEM

作　　者：王治安[1] 王军生[1] 童洪辉[1] 

机构地区：[1]核工业西南物理研究院,四川成都610041

出　　处：《真空》2011年第4期76-79,共4页Vacuum

摘　　要：采用中频反应磁控溅射孪生靶在玻璃基体上沉积TiO2薄膜。沉积过程中采用多路送气和等离子体发射光谱监测控制系统，使整个反应溅射过程维持在“过渡区”，从而快速稳定获得均匀高质量的TiO2薄膜，沉积速度在50nm／min以上。随着SP值的增加，沉积速率的增加呈线性关系。通过比较不同SP值制备的TiO2薄膜的光谱图发现，快速稳定地沉积TiO2薄膜的SP值大致在2．5～3．8范围内。Titanium dioxide （TiO2） films were deposited on unheated glass substrates by medium-frequency reactive magnetron sputtering process with twin Ti target. To achieve a deposition rate over 50nm/min which is much higher than that by other processes, the stable and quick deposition proceeded in a ＇transition region＇ via an advanced muhichannel reactive plasma gas control system, i.e., the plasma emission monitoring （PEM）, thus obtaining the homogeneous TiO2 films. With the increasing SP value, the increase in deposition rate became linear. Comparing the spectra of the films prepared at different SP values, it was found that the proper SP value is in the range from 2.5 to 3.8for the quick and stable deposition of TiO2 thin films.

关 键 词：TIO2 孪生靶 过渡区 PEM 

分 类 号：O484.1[理学—固体物理]