太赫兹探测用GaAs MESFET I-V特性模拟计算  

Simulation and calculation of I-V characteristics of GaAs MESFET in THz detection

作　　者：李凡[1] 史衍丽[1] 赵鲁生[1] 徐文[2] 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]中国科学院合肥固体物理研究所,安徽合肥230037

出　　处：《红外与激光工程》2011年第7期1205-1208,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金重点项目(U1037602)

摘　　要：Ⅲ-Ⅴ族化合物半导体材料GaAs,由于其本征载流子浓度比Si约低104,电子迁移率约是Si的5倍,电阻率高达108Ωcm,有利于降低寄生电容,减少漏电流;另外,GaAs材料便于加工,可方便地实现大规模集成,适用于制作MESFET器件。目前用于太赫兹探测的GaAs MESFET在国际上有了较大的发展,为了进一步研究MESFET的器件特性,参照国外现有的作为太赫兹探测的GaAsMESFET器件结构,通过建立器件结构模型,并进行掺杂、网格化后使用Synopsys器件模拟软件求解泊松方程,计算并分析了其电流电压特性。计算结果和实验测量结果比较吻合。The III-V compound semiconductor material GaAs whose intrinsic carriver concentration is about 104 times lower than that of the material Si, and electron mobility is about 5 times larger than that of the material Si, and resistance rate is about 10^8 Ωcm, can reduce the parasitic capacitance and leakage current. The device processing is also easily to realize large-scale integration. GaAs MESFET could be made. At present, terahertz （THz） detection based on bulk plasmons in GaAs MESFET has obtained a larger development in abroad. In order to further study the MESFET devices characteristics, GaAs MESFET devices model was established in this paper, which referred the present abroad device structures. Synopsys device simulation software was used to solve Poisson equation, and calculate its current-voltage characteristics. The simulation result and measurement results agree well with each other.

关 键 词：金属半导体场效应管 太赫兹探测 I-V特性 器件模拟 Synopsys器件模拟软件 

分 类 号：TN215[电子电信—物理电子学]