808nm无铝材料激光器可靠性筛选的实验探讨  

Reliability and Screen of 808 nm Al free Semiconductor Lasers

作　　者：高欣[1] 曲轶[1] 薄报学[1] 王晓华[1] 张兴德[1] 

机构地区：[1]长春光学精密机械学院高功率半导体激光国家重点实验室

出　　处：《光电子．激光》1999年第6期580-581,共2页Journal of Optoelectronics·Laser

基　　金：高功率半导体激光国家重点实验室资助课题

摘　　要：对８０８ ｎｍ 无铝ＩｎＧａＡｓＰ／ＧａＡｓ半导体激光器进行可靠性筛选实验，给出了器件老化前后的工作特性及其变化情况；讨论器件工作特性变化甚至失效的可能原因，并给出在进行器件筛选实验时的初步判据。用工作电流的变化率来对器件的可靠性做初步的判定，认为工作电流的变化率小于１％The experiments on the reliability and screen of 808 nm Al free semiconductor laser were carried out to examine the operating characteristics and its changes after ageing.The possible origin of degradation or even failure behavior was discussed.We presented a reliable criteria of screening semiconductor lasers.The reliability of a laser could be characterized by the change rate of operating current.The lasers with the change rate of operating current smaller than 1% are classified to be reliable.

关 键 词：半导体激光器 可靠性 筛选 激光器 

分 类 号：TN248.4[电子电信—物理电子学]