开口波导法无损测量微波集成电路基片复介电常数  

Nondestructive Measurement on Complex Permittivity of Substrates by Using Open-Ended Waveguide Method

作　　者：李纪鹏[1] 龚勋[1] 蔡树榛[1] 

机构地区：[1]复旦大学波散射与遥感中心,上海200433

出　　处：《微波学报》1999年第4期317-322,共6页Journal of Microwaves

摘　　要：提出一种测量微波集成电路基片复介电常数的新方法。通过测量贴于开口矩形波导外的介质基片的反射系数，可计算得基片的介电常数和损耗角。经过理论分析，给出求解复介电常数的计算公式和优化算法。对一些基片的复介电常数进行了实际测量，结果表明该测量方法运算量小，精度高，且具有设备简单，不需对样品进行特殊加工或破坏样品等优点。A novel method for the measurement of the complex permittivity of substrates ispresented. The complex permittivity of the sample which is placed outside of an open-ended rectangular waveguide is evaluated from the reflection coefficient of this flange mounted waveguide.Upon construction of the reflection coefficient expression,an inverse problem is then solved to extract the complex permittivity of the substrates. Experiments are conducted to verify the theory.The results show that this method is very simple,accurate,and nondestructive.

关 键 词：微波集成电路 介电常数 开口波导 无损测量 

分 类 号：TN454.07[电子电信—微电子学与固体电子学]