偏压对掺钨含氢类金刚石碳膜摩擦学性能的影响  

Effect of Substrate Bias Voltage on Mechanical and Tribological Properties of Tungsten-doped Hydrogenated Diamond-like Carbon Films

作　　者：杨拉毛草 周晖[1] 郑军[1] 桑瑞鹏[1] 万志华[1] 

机构地区：[1]兰州空间技术物理研究所表面工程技术重点实验室甘肃兰州730000

出　　处：《润滑与密封》2011年第8期23-26,30,共5页Lubrication Engineering

摘　　要：利用非平衡磁控溅射技术在单晶硅片及9Cr18基体表面制备不同偏压下的掺钨含氢类金刚石碳膜。采用Ra-man光谱分析薄膜结构,采用纳米硬度测试仪和纳米划痕仪研究薄膜的纳米硬度、弹性模量和膜基附着力,在球-盘摩擦试验机上测试薄膜在大气环境中的摩擦学性能,研究薄膜的摩擦学性能与偏压的关系。结果表明:制备的薄膜样品均具有典型的类金刚石碳膜结构;基体偏压强烈影响薄膜的力学和摩擦学性能,薄膜硬度和弹性模量在0～150 V范围内随着偏压增加而增大,薄膜的摩擦因数在偏压为100 V时最小,在此参数下的耐磨寿命也最长。Tungsten-doped hydrogenated diamond-like carbon films were deposited on Si and 440C stainless steel substrates under different substrate bias voltage by unbalanced magnetron sputtering. Microstructure of these films was analyzed by Raman spectroscopy,hardness and elastic modulus were tested on nano-hardness tester and nano-scratch tester. Tribological properties of ambient atmosphere were studied on ball-on-disk tester. The results show that the deposited films have typical diamond-like structure. Substrate bias voltage strongly influences the mechanical and tribological properties of tungsten-doped hydrogenated diamond-like carbon films. Hardness and elastic modulus of films increase with substrate bias voltage increasing in the range of 0 - 150 V. The film deposited under substrate bias voltage of 100 V has the lowest average friction coefficient and the longest wear life.

关 键 词：非平衡磁控溅射 金刚石碳膜 力学性能 摩擦学性能 

分 类 号：TH117.1[机械工程—机械设计及理论]