过渡层对铜基金刚石薄膜的影响  

Diamond Films Deposited on Copper With Different Interlayers

作　　者：田孟昆[1] 余志明[1] 刘学璋[1] 葛婧萱[1] 王玲[1] 黄臣 

机构地区：[1]中南大学材料科学与工程学院,长沙410083 [2]金瑞新材料科技股份有限公司,长沙410083

出　　处：《中国表面工程》2011年第4期19-24,共6页China Surface Engineering

摘　　要：采用热丝化学气相沉积(HFCVD)在纯铜基体及4种不同的过渡层(Ti、Nb、Ni、W)上制备金刚石薄膜。利用场发射扫描电子显微镜(FE-SEM)、拉曼光谱仪(Raman)以及维氏硬度计对金刚石薄膜进行检测分析,研究了不同过渡层对金刚石薄膜形貌质量和附着性能的影响。结果表明,在纯铜基体以及多种过渡层上都能制备高纯度的金刚石薄膜;在形核率较高的基体上金刚石颗粒的尺寸较小,在Ni过渡层上金刚石颗粒的尺寸较大;金刚石薄膜在Ti过渡层上结合性能最好,但是非金刚石相最多。在Nb、W过渡层上的结合性能最差。Diamond films were deposited directly on pure copper and copper suhstrate pre-coated with four different interlayers（Ti,Nb,Ni,W） by hot filament chemical vapor deposition （HFCVD）. The surface morphology, film quality were characterized by scanning electron microscopy （SEM）, micro-raman spectroscopy, respectively. The adhesion of the diamond films was measured by Vickers hardness tester. The results show that from Raman spectra, diamond film with the high purity can be synthesized on all samples, high diamond nucleation of different substrates results in low diamond particle size which is bigger on Ni interlayer, which is bigger on Ni interlayer; the adhesion of diamond films deposited on copper with Ti interlayer is the best, but the quality of substrate with Ti interlayer is the most. The adhesion of diamond films deposited on Nb, W interlayers is the worst.

关 键 词：金刚石薄膜 铜 过渡层 化学气相沉积 附着性能 

分 类 号：TG174.444[金属学及工艺—金属表面处理] TB43[金属学及工艺—金属学]