联氨浓度对化学水浴沉积ZnS薄膜性能的影响  

Effects of Hydrazine Concentration on the Properties of ZnS Thin Film Deposited by Chemical Bath Deposition

作　　者：叶亚宽[1] 张弓[1] 庄大明[1] 

机构地区：[1]清华大学机械工程系,北京100084

出　　处：《中国表面工程》2011年第4期55-59,F0003,共6页China Surface Engineering

基　　金：福建省自然科学基金(E0810006)

摘　　要：利用化学水浴法(CBD)在硫酸锌、氨水、联氨、硫脲的沉积体系下制备CIGS太阳能电池的ZnS缓冲层薄膜,研究了联氨浓度对缓冲层ZnS薄膜的生长过程、晶体结构及物理性能的影响。结果表明,联氨浓度能够显著影响ZnS薄膜的生长速度,联氨浓度越高,薄膜厚度越大,薄膜的致密性也随之提高;联氨浓度对薄膜的结晶性影响较小,CBD法制备的ZnS薄膜均为非晶薄膜;制备的ZnS薄膜有较高的透过率,禁带宽度为3.85 eV左右,能够使更多短波、高能量光子透过缓冲层到达CIGS吸收层,从而提高电池性能。The ZnS thin film was deposited by Chemical Bath Deposition （CBD） for the CIGS thin film solar cells as the buffer layer. The Influences of the hydrazine concentration on the growth process and properties of ZnS thin films were investigated. The results show that the hydrazine influences the growth rate distinctly, the increasing of the hydrazine concentration makes the ZnS thin film more compact and thicker. But the hydrazine influences the crystalline of ZnS hard ly. All the ZnS thin films are amorphous and of high optical transmittance, and their band gaps are about 3.80 eV, which is suitable for the low wavelength photons to reach the CIGS absorber layer and improve the cell performance.

关 键 词：ZNS薄膜 联氨浓度 化学水浴沉积(CBD) 

分 类 号：TB43[一般工业技术]