考虑准饱和效应的一种改进VDMOS物理模型  

An Improved Physical Model for VDMOS Considering Quasi-Saturation Effect

作　　者：鲍嘉明[1] 孙伟锋[2] 时龙兴[2] 

机构地区：[1]北方工业大学信息工程学院微电子学系,北京100144 [2]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《微电子学》2011年第4期612-616,共5页Microelectronics

摘　　要：在考虑准饱和效应的情况下,给出了能够精确描述漂移区纵向电场对电子迁移率影响的微分方程,建立了包括用解析方法求解该方程、漂移区电压降求解方法等在内的一整套处理方法,并由此提出了VDMOS的一种改进物理模型。计算结果表明,与Kim Yeong-Seuk等人提出的模型相比,该改进模型在更大的工作电压范围内都具有较高的计算精度,特别是在VDMOS发生准饱和效应时,计算精度有较大程度的提高,更加符合MEDICI的模拟结果。A differential equation with quasi-saturation effect in consideration was provided,which could accurately describe effects of vertical electric field of drift region on electron mobility.A set of processing methods was established,including analytical method to solve this differential equation,calculation of voltage drop in drift region.Based on these methods,an improved physical model was proposed for VDMOS.Computational result showed that,compared with Yeong-seuk Kim＇s model in Reference [4],the proposed model was more accurate in a wider voltage range.Especially for quasi-saturation effect in VDMOS,the computational accuracy was significantly improved,and it was closer to MEDICI simulation.

关 键 词：垂直双扩散MOS场效应晶体管 物理模型 准饱和效应 

分 类 号：TN432[电子电信—微电子学与固体电子学]