苯热合成法制备强紫外光致发光a-SiO_xC_yH_z 膜  

Preparation of a SiO_xC_yH_z ultraviolet emitting films by benzene thermal synthesis method

作　　者：李明[1] 傅正平[1] 杨碚芳 程海凌 刘如川 阮耀钟[1] 

机构地区：[1]中国科学技术大学结构分析开放实验室 [2]中国科学技术大学材料科学与工程系

出　　处：《中国科学技术大学学报》1999年第6期730-734,共5页JUSTC

基　　金：国家自然科学基金!(69876033)

摘　　要：用苯热合成法分别在２００ ℃、３００ ℃、４００ ℃下制得非晶ＳｉＯｘＣｙＨｚ 膜，在室温下观测到强的紫外光致发光，典型样品的发光强度可与多孔硅相比．实验中发现不同温度下生长的样品，其发光谱中均存在３４０ ｎｍ 发光峰，在４００ ℃生长的样品的发光谱中还出现了３８０ ｎｍ 的伴峰．对Ｘ射线衍射谱，Ｆｏｕｒｉｅｒ 变换红外吸收谱，Ｘ 射线光电子能谱，光致发光谱，及光致发光激发谱的分析表明，３４０ ｎｍ 的发光来源于氧化硅中的缺陷，而３８０ ｎｍ 的发光峰可能与材料中的ＳｉＣ和ＳｉＳｉ 键有关．A series of amorphous SiO xC yH z films were synthesized by benzene thermal technique at three different growth temperatures of 200 ℃,300 ℃,400 ℃ respectively and intense ultraviolet photoluminescence was observed at room temperature. In some special samples, the intensities of photoluminescence could be comparable to that of porous silicon. In the emission spectra a peak at 340 nm existed in all the samples and a shoulder peak at 380 nm only appeared at the growth temperature of 400 ℃. By the analysis of XRD,FTIR,XPS,PL and PLE spectra, it is found that the photoluminescence peak at 340 nm originates from the defects in silicon oxide, while the peak at 380 nm may be related to Si Si and Si C bonds in our samples.

关 键 词：苯热合成法 紫外光致发光 氧化硅 复合膜 

分 类 号：TN304.21[电子电信—物理电子学] TN383.2