ZnO纳米棒阵列膜的制备及其光电化学性能研究  

Fabrication of ZnO nanorod array films and their photoelectrochemical performance

作　　者：王海锋[1] 王树林[2] 蹇敦亮[2] 陈海燕[1] 丁浩冉[1] 

机构地区：[1]上海理工大学能源与动力工程学院,上海200093 [2]上海理工大学材料科学与工程学院,上海200093

出　　处：《功能材料》2011年第8期1478-1481,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50575147);上海市教委重点资助项目(J50503);上海市纳米专项资助项目(1052nm02900)

摘　　要：采用化学溶液沉积法,在ZnO纳米颗粒膜修饰的FTO导电玻璃基底上,制备了ZnO纳米棒阵列。用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)对样品进行表征。研究结果表明所制备的ZnO纳米棒为六方纤锌矿相单晶结构,沿c轴择优取向生长,平均直径约为40nm,长度约为900nm;ZnO纳米棒阵列生长致密,取向性较一致。以曙红Y敏化的ZnO纳米棒阵列膜为光阳极制作了染料敏化太阳能电池原型器件,在光照强度为100mW/cm2下,其开路电压为0.418V,短路电流为0.889mA/cm2,总的光电转换效率为0.133%。ZnO nanorod arrays were prepared by chemical solution deposition on pre-modified FTO substrate with ZnO nanoparticles.X-ray diffraction（XRD）,field emission scanning electron microscopy（FESEM） and transmission electron microscopy（TEM） were used to characterize the ZnO nanorod arrays.The as-prepared ZnO nanorods are hexagonal wurtzite single-crystalline structure and grow along c-axis.The individual ZnO nanorod is about 40nm wide and 900nm long.The nanorod arrays are dense arranged and consistent oriented.Using the ZnO nanorods array film sensitized by eosin Y as the photoelectrode,we fabricated dye-sensitized solar cell device,which exhibits an open-circuit photovoltage of 0.418V,a short-circuit photocurrent density of 0.889mA/cm2,and an overall conversation efficiency of 0.133% under an AM-1.5 illumination at 100mW/cm2.

关 键 词：ZNO纳米棒阵列 化学溶液沉积 曙红Y 染料敏化太阳能电池 

分 类 号：O472[理学—半导体物理]