GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy  

作　　者：朱岩 李密锋 贺继方 喻颖 倪海桥 徐应强 王娟 贺振宏 牛智川 

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第8期10-13,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.10734060,90921015);the National Basic Research Program of China(Nos.2007CB936304,2010CB327601)

摘　　要：Molecular beam epitaxy growth of a bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot（BQD） structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9×10~9 to 1.4×10^（10） cm^（-2）. The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.Molecular beam epitaxy growth of a bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot（BQD） structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9×10~9 to 1.4×10^（10） cm^（-2）. The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.

关 键 词：InAs bilayer quantum dots molecular beam epitaxy long wavelength photoluminescence 

分 类 号：O471.1[理学—半导体物理]