Surface morphology and composition studies in InGaN/GaN film grown by MOCVD  

作　　者：陶涛 张曌 刘炼 苏辉 谢自力 张荣 刘斌 修向前 李毅 韩平 施毅 郑有炓 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronics Science and Engineering,Nanjing University

出　　处：《Journal of Semiconductors》2011年第8期14-17,共4页半导体学报（英文版）

基　　金：Project supported by the Special Funds for Major State Basic Research Project,China(No.2011CB301900);the Hi-Tech Research Project (No.2009AA03A198);the National Natural Science Foundation of China(Nos.60990311,60721063,60906025,60936004);the Natural Science Foundation of Jiangsu Province,China(Nos.BK2008019,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-Electronics,China

摘　　要：InGaN films were deposited on（0001） sapphire substrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy（SEM） and atomic force microscopy（AFM）.Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.InGaN films were deposited on（0001） sapphire substrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy（SEM） and atomic force microscopy（AFM）.Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.

关 键 词：InGaN film MOCVD surface morphology V-defects 

分 类 号：TN304.055[电子电信—物理电子学]