S波段高效GaN逆E类功率放大器  

S-Band High Efficiency GaN Inverse-Class E Power Amplifier

作　　者：曹韬[1] 刘友江[2] 曾荣[1] 吕立明[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,绵阳621900 [2]清华大学工程物理系,北京100084

出　　处：《微波学报》2011年第4期49-52,56,共5页Journal of Microwaves

摘　　要：介绍一种高效逆E类功率放大器的设计方法,并选用GaN器件设计了工作于2.3GHz的逆E类功率放大器。当供电26V,输入功率26dBm时,放大器输出功率40.2dBm,工作效率76.1%,PAE为73.3%。提供了详尽的仿真与实测数据并对放大器性能进行分析。用数字预失真技术对逆E类功率放大器进行线性化校正并取得了良好的效果。A design methodology of high efficiency inverse-class E power amplifier is presented in this paper.An output power 40.2dBm at 2.3GHz with drain efficiency of 76.1% and power-added efficiency of 73.3% in supply of 26V is obtained.Simulations and experimental results are offered and the performance of the proposed amplifier has been analyzed in detail.Furthermore,digital predistortion is used to increase the linearity of inverse class-E power amplifier,and a high degree of spectral suppression for out-of-band is achieved.

关 键 词：E类功率放大器 高效率 GAN 数字预失真 

分 类 号：TN722.75[电子电信—电路与系统]