入射角度对Ar^+与SiC表面相互作用影响的分子动力学模拟  

Molecular Dynamics Simulation of the Effects of Angle on Ar^+ Interactions with SiC Surface

作　　者：孙伟中[1] 张浚源[1] 赵成利[2] 陈峰[2] 苟富均[1,3] 

机构地区：[1]四川大学原子核科学技术研究所辐射物理及技术教育部重点实验室,成都610064 [2]贵州大学等离子体与材料表面作用研究所,贵阳550025 [3]荷兰皇家科学院等离子体所

出　　处：《材料导报》2011年第16期136-139,共4页Materials Reports

基　　金：国际热核聚变实验堆(ITER)计划专项(2009GB104006);贵州省优秀青年科技人才培养计划(700968101)

摘　　要：采用分子动力学模拟方法研究了入射角度对Ar+与SiC样品表面相互作用的影响。由模拟结果可知,入射角度对样品原子溅射影响很大。随着入射角度的增大,Si原子和C原子的溅射量先增加后减小。相同入射角度下,Si原子的溅射阈值比C原子的小,Si原子的溅射量大于C原子的溅射量。初始样品在Ar+以不同角度轰击2000次后的形貌各异。产物中主要以Si原子和C原子为主,有少量的Si类和C类产物。入射角度对产物Si原子的角度分布几乎没有影响,而对产物C原子的角度分布有较小的影响。Molecular dynamics simulations method was employed to investigate the angle effects of Ar＋ interactions with SiC surface. The simulation results show that the number of removed Si and C atoms increases with increasing incident angle; after passing the maximum at 65% finally it decreases sharply. And the amount of removed Si is greater than C at the same incident angle. The samples, which have been bombardment of 2000 Ar＋ with different incident angles, varied from each other. The Si and C atoms are dominant among the sputtering products and there are a few compounds which contain Si and C. The incident angle has little effect on the angle distribution of the sputtering Si while it has something to do with the angle distribution of C.

关 键 词：分子动力学 SIC 溅射 角度分布 

分 类 号：TL612[核科学技术—核技术及应用] TL627