重掺杂硅微球的脉冲放电法制备研究  

Research on Preparing Heavy Doped Silicon Microspheres by Pulsed Electrical Discharge Method

作　　者：洪捐[1,2] 汪炜[1] 冯海娣[1] 张志伟[1] 张伟[1] 

机构地区：[1]南京航空航天大学机电学院,江苏南京210016 [2]盐城工学院机械工程学院,江苏盐城224051

出　　处：《电加工与模具》2011年第4期19-22,共4页Electromachining & Mould

摘　　要：硅微球的制备是开发新型薄膜太阳能电池和选择性发射极电池的关键技术之一。采用重掺杂单晶硅(电阻率为0.01Ω·cm),在液体介质中利用脉冲放电方法产生局部瞬时高温,制备球状硅微粒。对比电火花线切割和电火花成形两种加工方法,通过对放电区域的温度场分布进行数值模拟,并采用SEM/EDS方法对其微观形貌和成分进行表征和分析,初步掌握了硅微球的形成机理。利用成形加工方法,成功制备出0.5～2μm的硅微球。Preparation of silicon microspheres is one of the key technologies for developing of the new types thin film solar cells （TFSC） and selective emitter （SE） cell. With the raw material of heavy doped mono crystalline silicon （resistivity 0.01Ω· cm）, silicon microspheres have been prepared in the liquid under local and transient high temperature generated by pulse electrical discharge method. Based on the numerical simulation of the temperature field distribution in the discharge area, micro topograplhy and composition of silicon microsphere are described and analyzed by SEM/EDS, the formation mechanism of the silicon microspheres has been studied by wire erosion and die-sinking electrical discharge machining （EDM） methods. The size of those microspheres prepared by die-sinking EDM is from 0.5μm to 2 μm.

关 键 词：重掺杂 硅微球 脉冲放电 太阳能电池 

分 类 号：TG661[金属学及工艺—金属切削加工及机床]