硅粉直接氮化热重实验研究  

Experimental study on direct nitridation of silicon by thermorgravimetry

作　　者：万金雄[1] 程乐鸣[1] 杨春[1] 朱茜茜[1] 骆仲泱 

机构地区：[1]浙江大学热能工程研究所能源清洁利用国家重点实验室,浙江杭州310027

出　　处：《能源工程》2011年第4期1-5,共5页Energy Engineering

基　　金：国家自然科学基金资助项目(50676084)

摘　　要：为了研究反应温度、粒径等氮化参数对氮化硅转化率的影响,使用三种不同粒径的硅粉颗粒在热重同步分析仪（TG）中进行了实验研究,并对反应产物进行了X射线衍射（XRD）分析,得到了氮化硅转化率随时间变化曲线。研究结果表明,硅、氮会在1000~1100℃开始发生反应,随后进入动力学控制阶段,该阶段持续5~10 m in,反应速率很快,最后进入反应速度较慢的扩散控制阶段。结果还表明,较小粒径原料和较高的温度对氮化硅转化率有积极影响,而硅粉原料表面的氧化层对硅氮反应有阻碍作用。粒径2.5μm的硅粉在1350℃时,其α相转化率可达75%,总转化率在90%以上。The effects of temperature and particle size on conversion rate of Si3N4 were studied by TG in which silicon particles of three different size were used,and the products were analyzed using XRD method to acquire the conversion rate curve of nitridation.The results indicated that silicon and nitrogen reacted at 1000～1100℃,and then the reaction developed into kinetic control process which lasted 5～10 minutes with quick reaction.Finally,the reaction was controlled by the diffusion of nitrogen with slow reaction rate.The results also showed that a smaller size of raw material and a higher temperature of the nitridation process had a positive impact on enhancing the conversion rate,while the oxide layer on the silicon particles had an impediment to nitridation.Silicon particles 2.5 μm in size reached conversion rate of α-Si3N4 up to 75% and the total conversion rate 90% at 1350℃.

关 键 词：氮化硅 硅氮反应 热重 XRD 

分 类 号：TQ174.6[化学工程—陶瓷工业]