空间辐射对CCD器件暗电流的影响研究  

Influence of Space Radiation on the Dark Current Density of CCD Equipment

作　　者：侯睿[1] 赵尚弘[1] 幺周石[2] 姜晓峰[1] 石磊[1] 李勇军[1] 占生宝[1] 

机构地区：[1]空军工程大学电讯工程学院,陕西西安710077 [2]中国空间技术研究院西安分院,陕西西安710077

出　　处：《空军工程大学学报（自然科学版）》2011年第4期64-68,共5页Journal of Air Force Engineering University(Natural Science Edition)

基　　金：国家"863"计划资助项目(2007AA01Z294);中国博士后科研基金资助项目(20090461466);陕西省自然科学基金资助项目(2009JQ8013)

摘　　要：电荷耦合器件CCD(Charge Coupled Device,CCD)作为卫星光通信系统中光信标子系统的关键部件,它的工作性能直接影响着光通信系统的整体性能。根据Shockley-Read-Hall理论,对粒子辐照条件下CCD器件的暗电流变化进行了深入的理论分析,依据理论分析展开数值模拟计算。结果表明:P沟道CCD辐照后的平均暗电流密度随温度的升高而增加、随辐照注量的提高而增大,暗电流尖峰产生的位置具有强烈的随机特性;温度较粒子辐照注量更能有效影响平均暗电流密度以及暗电流尖峰的产生,温控器件以及温控技术将是决定CCD定位精度的重要环节。The charge- coupled device （CCD） is the key communication system, whose efficiency determines the component of the beacon subsystem in optical satellite performance of the optical communication system. According to the theory of Shockley - Read - Hall, the theoretical analysis of CCD equipment under particle radiation is made, and the numerical calculations are developed based on the theoretical analysis. The calculation results show that the mean dark current of P - CCD increases with the increase of operation temperature, the stronger particle radiation leads to the higher mean dark current and the hot spikes are strongly random; the temperature more effectively induces CCD mean dark current density and its hot spikes than particle radiation fluency. Therefore, the temperature - controlling chips and technique will play a key role in determining the CCD position accuracy.

关 键 词：CCD 空间辐射 暗电流密度 温控技术 

分 类 号：TN929[电子电信—通信与信息系统]