硅半导体放电加工中的肖特基势垒特性研究  

Research on Schottky Barrier in Semiconductor Silicon Electrical Discharge Machine

作　　者：邱明波[1,2] 刘志东[1,2] 田宗军[2] 汪炜[2] 黄因慧[1] 

机构地区：[1]南京航空航天大学江苏省精密与微细制造技术重点实验室,江苏南京210016 [2]南京航空航天大学机电学院,江苏南京210016

出　　处：《应用基础与工程科学学报》2011年第4期664-671,共8页Journal of Basic Science and Engineering

基　　金：国家自然基金(50975142);江苏省科技支撑计划(BE2009161);江苏省博士后基金项目(1002009C)

摘　　要：金属夹具与半导体接触会形成肖特基势垒,为了研究该势垒对半导体放电加工的影响,利用二极管和电阻模型建立了等效电路.固定端和放电端形成的肖特基势垒,都可等效成二极管,在放电回路中一个处于正向偏置,另一个处于反向偏置.本文通过两端金属进电的方法,研究了肖特基势垒对放电电流的影响,理论研究发现了半导体放电伏安曲线的3个特征量:导通角、击穿点和击穿角,并通过实验方法测量伏安曲线,找到了这3个特征量的关系.击穿角由电路中的电阻决定,与肖特基势垒无关,而导通角和击穿点由肖特基势垒决定,与电阻无关.To study the influence of Schottky barrier to semiconductor electrical discharge machining（EDM）,which exits between metal clamp and semiconductor,a equivalent circuit was built by diode and resistor.The Schottky barriers between fixed-terminal and discharge terminal were seen as diodes,one at a forward bias,the other in reverse bias.In this paper,the influence of Schottky barrier to discharge current had been studied,using both ends of metal for conducting.It was found in theoretical study that the semiconductor-discharge voltammetry curves had three features：conduction angle,breakdown point and puncture angle,and these were measured by voltammetry curve experiments.Puncture angle is determined by the resistance in the circuit,nothing to do with the barrier,while the conduction angle and the breakdown point are determined by the barrier,nothing to do with the resistance.

关 键 词：硅半导体 放电加工 肖特基势垒 伏安曲线 击穿电压 

分 类 号：TG662[金属学及工艺—金属切削加工及机床] TN301.1[电子电信—物理电子学]