位移损伤剂量法评估空间GaAs/Ge太阳电池辐照损伤过程  

Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose

作　　者：吴宜勇[1] 岳龙[1] 胡建民[2] 蓝慕杰[3] 肖景东[1] 杨德庄[1] 何世禹[1] 张忠卫[4] 王训春[4] 钱勇[4] 陈鸣波[4] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,哈尔滨150001 [2]哈尔滨师范大学物理与电子工程学院,哈尔滨150025 [3]哈尔滨工业大学航天学院,哈尔滨150001 [4]上海空间电源研究所,上海200233

出　　处：《物理学报》2011年第9期723-732,共10页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11075043)资助的课题~~

摘　　要：本文针对GaAs/Ge太阳电池,利用位移损伤剂量法研究了其在轨服役条件下的性能退化行为.首先在地面模拟辐照环境中,试验获得了在不同能量的电子和质子辐照下的电池性能随辐照注量的退化行为.基于上述实验结果以及计算获得的带电粒子在电池中的非电离能量损失(NIEL)获得了不同能量电子辐照位移损伤的等效指数n为1.7,电子损伤剂量转化为质子损伤剂量等效系数为5.2,并进一步建立了电池性能随位移损伤剂量的退化方程.利用该方法对国产GaAs/Ge太阳电池在500,22000和36000km轨道带电粒子辐照条件下电性能退化行为以及不同厚度玻璃盖片对电池损伤的防护效果进行了评价.In this paper,the degradation of irradiated GaAs/Ge single junction （SJ） solar cells is evaluated under the orbital environments using the displacement damage dose method. Firstly the electric-property changes of the SJ solar cells are experimentally obtained with the fluencies of electrons and protons of various energies under ground-based irradiation simulators. Based on the experimenal results and the calculated non-ionization energy losses （NIELs） of the electrons and protons in GaAs, the equivalent exponent n is obtained to be 1.7 for various electron energies,while the equivalent coefficient Rep for electron displacement damage converted into that of protons is 5.2. Furthermore, a degradation formula of the electrical property of the domestic SJ solar cell is established as a function of displacement damage dose during the particle irradiation. Using the displacement damage technique, the orbital evolution of the electric property degradation of the domestic SJ cell is predicted in this paper. In the meantime, the shielding effects of the cover glass with different thicknesses are also evaluated.

关 键 词：GAAS/GE太阳电池 辐照损伤 带电粒子 位移损伤剂量 

分 类 号：TM914.4[电气工程—电力电子与电力传动]