SiGe异质结晶体管技术的发展  

Development of SiGe Heterojunction Transistor Technology

作　　者：辛启明[1] 刘英坤[1] 贾素梅[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2011年第9期672-676,729,共6页Semiconductor Technology

摘　　要：以全球信息产业需求及技术发展为背景,回顾了以能带工程为基础的、在现代通信领域得到广泛应用的SiGe异质结晶体管技术的发展历程。介绍了分子束外延、超高真空化学气象淀积和常压化学气象淀积3种典型的SiGe外延技术并对比了这三种技术的优缺点。在此基础上,对SiGe HBT技术进行了分析总结并列举了其典型技术应用。以IBM的SiGe BiCMOS技术为例,介绍了目前主流的SiGe异质结晶体管技术-SiGe BiCMOS技术的研究现状及典型技术产品。最后对正在发展中的SiGe FET技术做了简要介绍。在回顾了SiGe异质结晶体管技术发展的同时,认为未来SiGe异质结晶体管技术的提高将主要依赖于超薄SiGe基区外延技术。With the background of the global information industry demand and technological development,the history of the SiGe heterojunction transistor technology is reviewed.The MBE,UHV/CVD and the APCVD technology are introduced,the advantages and disadvantages of the three kinds of technology are compared.Based on this,the SiGe HBT technology was summarized and the typical applications is listed.With the BiCMOS technology of the IBM as a example,the research status of the SiGe BiCMOS technology which is the main SiGe heterojunction transistor technology is introduced.Finally,the SiGe FET technology is introduced.The history of the SiGe heterojunction transistor shows that the SiGe heterojunction transistor technology will depend on the ultrathin epitaxy technology of the SiGe base.

关 键 词：SIGE技术 SiGe外延 SIGE HBT SIGE BICMOS SIGE FET 

分 类 号：TN433[电子电信—微电子学与固体电子学]