DRIE技术加工W波段行波管折叠波导慢波结构的研究  

Microfabrication of W band Folded Waveguide Slow Wave Structure using DRIE techonogy

作　　者：李含雁[1] 冯进军[1] 白国栋[1] 

机构地区：[1]中国电子科技集团公司第12研究所,大功率微波电真空器件技术国防科技重点实验室,北京100016

出　　处：《中国电子科学研究院学报》2011年第4期427-431,共5页Journal of China Academy of Electronics and Information Technology

基　　金：大功率微波电真空器件技术国防科技重点实验室基金(9140C0504010704);国防科技创新团队项目

摘　　要：简要介绍了利用深反应离子刻蚀制作折叠波导慢波结构的现状及制作的工艺流程。对深反应离子刻蚀掩膜制作即光刻工艺,以及折叠波导慢波结构的深刻加工进行了深入的研究。详细分析了各光刻工艺对光刻胶图形的影响,尤其是前烘对光刻胶图像侧壁垂直度的影响;在深反应离子刻蚀中,还详细分析了刻蚀时间、下电极功率以及刻蚀气体气压对刻蚀结果的影响。经参数优化后获得最佳工艺参数,并制作出带有电子注通道的W波段折叠波导慢波结构,慢波结构深为946μm,侧壁垂直度为91°,电子注通道深为225μm,侧壁垂直度为90°。The recent progress and the main fabrication process of manufacturing folded waveguide slow wave structures using deep reactive ion etching（DRIE） technology are briefly presented with an emphasis on fabrication of the etching mask and the prototypical W band serpentine trench etched in Si using DRIE.Feasibility studies of effects of fabrication parameters on the photoresist pattern are presented,especially on profile of the photoresist pattern.In the process of DRIE,the effects of platen power and the etch time sequence on the etch rate,etch profile are also studied in detail,so as to obtain the optimal fabrication parameters.With the optimal fabrication parameters,W band folded waveguide slow wave structure with the beam tunnel is fabricated.The W band serpentine trench is approximately 946 μm deep and its profile is 91°,and the beam tunnel is approximately 225 μm and its profile is 90°.

关 键 词：折叠波导 微细加工 深反应离子刻蚀 光刻工艺 

分 类 号：TN105[电子电信—物理电子学]