GaN基倒装焊LED芯片的光提取效率模拟与分析  

Simulation and Analysis of Light Extraction Efficiency of GaN-based Flip-chip Light-emitting Diodes

作　　者：钟广明[1] 杜晓晴[2] 田健[1] 

机构地区：[1]重庆大学光电工程学院,重庆400044 [2]重庆大学光电技术与系统教育部重点实验室,重庆400044

出　　处：《发光学报》2011年第8期773-778,共6页Chinese Journal of Luminescence

基　　金：中央高校科研业务费(CDJZR10120014;CDJXS11120021)资助项目

摘　　要：采用蒙特卡罗光线追踪方法,模拟GaN基倒装LED芯片的光提取效率,比较了蓝宝石衬底剥离前后、蓝宝石单面粗化和双面粗化、有无缓冲层下LED光提取效率的变化,并对粗化微元结构和尺寸作了进一步选取与优化。研究结果表明:采用较厚的蓝宝石衬底和引入AlN缓冲层均有利于LED光提取效率的提高;蓝宝石衬底双面粗化对提高光提取效率的效果要明显好于单面粗化;表面粗化的结构和尺寸对光提取效率有较大影响,当微元特征尺寸与微元间距相当时,光提取效率较高。According to Monte-Carlo ray tracing method,this paper simulated the GaN-based flip-chip LED light extraction efficiency（LEE）,compared the differences between the status of sapphire with substrate and without it,with one side roughening and double sides roughening,with and without buffer layer,and made further selection and optimization about the structure and the size of surface roughing unit.The results showed that both the thicker substrate and introduction of AlN buffer layer were favorable for the increase of LEE,the LEE for the chip with double surfaces roughened sapphire substrate was significantly better than the one with single surface roughened sapphire substrate,the structure and size of the surface roughing unit have great influences on the LEE,the LEE was relatively higher when the size of micro roughened structure was comparable to its one-to-one distance.

关 键 词：GaN基倒装LED 光提取效率 光线追踪 双面粗化 ALN缓冲层 

分 类 号：TN312.8[电子电信—物理电子学]