含双δ势垒铁磁/半导体/铁磁异质结隧穿电导的性质  

Tunneling Conductance in Ferromagnetic/Semiconductor/Ferromagnetic Heterojunction with Double δ Barriers

作　　者：王素新[1] 景君梅 李春光[1] 杜坚[1] 

机构地区：[1]河北民族师范学院物理系,河北承德067000 [2]承德翠桥学校,河北承德067000

出　　处：《固体电子学研究与进展》2011年第4期350-353,358,共5页Research & Progress of SSE

基　　金：河北省自然科学基金资助项目(A2011205092);河北省新型薄膜材料重点实验室开放课题

摘　　要：研究了含双δ势垒的三终端铁磁/半导体/铁磁异质结隧穿电导的性质,结果表明:隧穿电导随半导体长度的增加作周期性等幅振荡,δ势垒强度、Rashba自旋轨道耦合强度、外加磁场强度及方向对隧穿电导均有不同的影响。In this paper the properties of tunneling conductance in ferromagnetic/semiconductor/ferromagnetic heterojunction with double δ barriers are investigated.The results indicate that the tunneling conductance shows behavior of periodic oscillation with equal amplitudes while the size of semiconductor increasing.The strength of δ barrier and the magnetic field as well as the Rashba spin-orbit interaction all have effects on the tunneling conductance.

关 键 词：δ势垒 RASHBA自旋轨道耦合 隧穿电导 磁场 

分 类 号：O471.1[理学—半导体物理]