磁控溅射SiC薄膜表面形貌演化行为研究  

Study on surface dynamic evolution of SiC thin films deposited by magnetron sputtering

作　　者：陈晖[1] 周细应[1] 孙卿[1] 

机构地区：[1]上海工程技术大学材料工程学院,上海201620

出　　处：《金刚石与磨料磨具工程》2011年第4期32-36,共5页Diamond & Abrasives Engineering

基　　金：上海市重点学科建设项目资助(J51402);上海工程技术大学大学生创新活动计划项目(A-0800-10-070)

摘　　要：采用射频磁控溅射法在石英玻璃基底上沉积SiC薄膜。用扫描电子显微镜(SEM)和原子力显微镜(AFM)观察薄膜的表面形貌,利用粗糙度和颗粒度大小对薄膜表面形貌动态演化进行量化表征。结果表明:在100～175 W溅射功率范围内,1 000℃高温真空退火处理能明显减小SiC薄膜表面粗糙度,膜层表面更为平滑,颗粒大小更为均匀;随着溅射功率的增大,颗粒度的总体变化呈现先增大后减小的趋势。SiC thin films were grown on quartz glass substrates by magnetron sputtering.Surface morphology of the films was investigated by scanning electron microscope（SEM） and atomic force microscope（AFM）,then the film surface dynamic evolution was analyzed by detecting roughness and grain size.The results showed that at 100～175 W sputtering power,the surface roughness of SiC thin films was significantly reduced by 1 000 ℃ high temperature vacuum annealing.The surface morphology of films became smoother,and the particle size became more uniform.With the sputtering power increasing,the particle size of diamond film increased first and then decreased.

关 键 词：SIC薄膜 表面演化 原子力显微镜 

分 类 号：TG73[金属学及工艺—刀具与模具]