梯度掺杂结构GaN光电阴极的激活工艺研究  

Activation technique of gradient-doping GaN photocathode

作　　者：李飙[1] 徐源[1] 常本康[1] 王晓晖[1] 杜玉杰[1] 高频[1] 张俊举[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《光电子．激光》2011年第9期1317-1321,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60871012)

摘　　要：利用自行研制的光电阴极多信息量测试评估系统,在线测试了梯度掺杂结构GaN光电阴极在激活过程中的光电流、Cs源电流和O源电流。根据激活后的阴极光谱响应曲线和量子产额曲线,分析了超高真空室真空度、激活前的阴极表面净化程度、激活中首次进Cs量、激活中的Cs/O比以及Cs/O源在激活中的供给方式等对阴极激活的影响,提出了梯度掺杂结构GaN光电阴极的优化激活工艺。The data,such as photocurrents,currents of Cs source and O source in the activation process of gradient-doping GaN photocathode,were measured in the preparation and evaluation system designed by us.The effects of vacuum,surface cleaning,the first flux of Cs,Cs/O ratio,and Cs/O flux on/off were analyzed based on the curves of spectral response and quantum yield obtained by testing the gradient-doping GaN photocathode after being fully activated.The optimized activation technique of gradient-doping GaN photocathode was presented in detail at last.

关 键 词：梯度掺杂 GAN 光电阴极 激活工艺 

分 类 号：TN204[电子电信—物理电子学]