射频功率晶体管内匹配技术中键合线的建模仿真与参数提取  

Modeling and Parameter Extraction of Bond-Wires in Internally Matched RF Power Transistor

作　　者：周永强[1,2] 王立新[1] 张万荣 夏洋[1] 谢红云[2] 丁春宝[2] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子器件》2011年第4期363-366,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(60776051;61006059;61006044);北京市自然科学基金项目(4082007);北京市教委科技发展计划项目(KM200710005015;KM200910005001);北京市属市管高校中青年骨干教师培养计划项目(102(KB)-00856);北京市优秀跨世纪人才基金项目(67002013200301)

摘　　要：金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。键合线的直径、长度、拱高和并列键合线间距等物理参量,均对器件性能有很大影响。采用三维电磁仿真软件EMDS和射频电路设计软件ADS对金属键合线互连进行了建模仿真和射频等效参数提取,分析了等效参数与键合线各物理参量之间的关系,针对具体的关系特点及内匹配技术中键合线的选取,给出了相应的优化设计措施。Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor. The diameter, length, arch height and space of bond-wires have great impacts on the radio frequency performance of RF power transistor. The three-dimensional electromagnetic simulation software EMDS and RF circuit design software ADS are used to model and extract the radio frequency equivalent parameters of the bond-wire. Then, the relationship between the variation of physical parameters and the radio frequency equivalent parameters of bond-wires are studied. Finally, the corresponding optimal design measures are proposed for the selection of bondwires in the internal matching technology of RF power transistor.

关 键 词：射频功率晶体管 内匹配 键合线 建模 参数提取 

分 类 号：TN385[电子电信—物理电子学]