基于AlN膜钝化层的高功率垂直腔面发射激光器  

High-Power Vertical-Cavity Surface-Emitting Laser with AlN Film Passivation Layer

作　　者：钟钢[1] 侯立峰[2] 王晓曼[1] 

机构地区：[1]长春理工大学电子信息工程学院,吉林长春130022 [2]中国人民解放军装甲兵技术学院电子工程系,吉林长春130117

出　　处：《中国激光》2011年第9期7-11,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(60676059)资助课题

摘　　要：高功率垂直腔面发射半导体激光器(VCSEL)内部的自生热是影响器件功能的重要因素,为改善器件的散热性能,采用AlN膜做钝化层研制了基于AlN膜钝化层的980 nm高功率VCSEL器件。对高功率VCSEL进行模拟仿真与理论分析表明,采用AlN膜钝化层可以改善器件内部的温度分布,降低器件的热阻,提高器件的散热能力;采用相同的外延片与工艺实验制备了出光孔径同为200μm的AlN膜钝化层和传统的SiO2膜钝化层的高功率VCSEL器件;对两种不同的钝化层的器件性能进行了实验对比测试,结果表明AlN膜钝化层的高功率VCSEL器件室温下的最大输出功率可达470 mW,比同温度下SiO2膜钝化层的高功率VCSEL器件的最大输出功率高140 mW。AlN膜钝化层的高功率VCSEL在外界温度80℃时,仍能正常激射,具有良好的温度适应性与光电性能。Self-heating in high-power vertical-cavity surface-emitting lasers （VCSELs） is an important influence factor for device characteristics. In order to improve device heat dissipation, a 980 nm high-power VCSEL on AIN film passivation layer is fabricated. The analog simulation and analysis on the high-power VCSEL show that the AIN film passivation layer can improve the temperature distribution inside high-power VCSEL, reduce the thermal resistance of VCSEL and enhance the ability of heat dissipation. The AIN film passivation layer and the SiO2 film passivation layer high power VCSELs both with 200 μm aperture have been made by the same processes on the same epitaxial wafer. The two kinds of high power VCSELs have been tested comparatively, and the testing results show that the output power of the VCSEL on AIN film passivation layer is 470 mW at room temperature, which is 140 mW higher than that of the device on the SiOz film passivation layer. It can operate at higher temperature up to 80 ℃ and has much better temperature and opto-electric characteristics.

关 键 词：激光器 高功率半导体激光 垂直腔面发射激光器 AlN膜 钝化层 

分 类 号：TN248.4[电子电信—物理电子学]