PC1D方法对铝背场钝化技术的分析  

Analysis of Aluminum Back-Surface Field Passivation Technique by PC1D

作　　者：闫丽 高华 

机构地区：[1]上海超日太阳能科技股份有限公司,上海201406

出　　处：《光电技术应用》2011年第4期49-52,共4页Electro-Optic Technology Application

摘　　要：降低单晶硅原材料成本,采用更薄的硅片作为太阳电池的原料是晶体硅太阳电池产业发展的趋势之一。对薄片化的太阳电池,铝背场的背表面钝化工艺显得愈加重要。采用PC1D太阳电池软件模拟的方法,对以商业用p型硅为衬底的单晶硅125×125太阳电池的铝背场的背表面钝化技术进行了模拟,分析得出,对一定厚度的电池片来说,尤其是当少数载流子的扩散长度大于硅片厚度时,背表面的复合速率对太阳电池效率的影响尤为明显。电池的效率随着铝背场结深的增加、背表面复合速率的降低、少数载流子寿命的提高而提高。铝背场能够改善背表面的钝化质量,降低背表面的复合速率,进而提高太阳能电池的光电转换效率,是目前商业化的晶体硅太阳电池普遍采用的背表面钝化技术。In order to reduce the cost of silicon raw materials, thinner silicon wafers are used for crystalline silicon solar cells. Aluminum back-surface field passivation technique is more important for thinner solar cells. PC1D method is used to model the aluminum back-surface field passivation technique of p-type monocrystalline silicon substrate 125× 125 solar cells. The model results are analyzed. For a certain thickness solar cells, especially when the minority carrier diffusion length is greater than the thickness of silicon wafers, the back-surface recombination velocity is particularly important for efficiency. The efficiency will be increased with the increase of aluminum back-surface field junction depth, the decrease of back-surface recombination velocity and the increase of minority carrier lifetime. Aluminum back-surface field can improve the quality of the back-surface passivation, reduce the back-surface recombination velocity thus improve the efficiency of solar cells, which is commonly used for the commercial crystalline silicon solar cells.

关 键 词：铝背场 背表面钝化 内量子效率 复合速率 少子寿命 

分 类 号：TM914.4[电气工程—电力电子与电力传动]