BCCD沟道电势直流测试方法研究  

Research on DC Testing Methods of BCCD Channel Potential

作　　者：汪凌[1] 韩恒利[1] 任利平[1] 廖晓航[1] 柳益[1] 苏玉棉[1] 岳志强[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2011年第4期489-491,共3页Semiconductor Optoelectronics

摘　　要：提出了一种对BCCD(埋沟电荷耦合器件)沟道电势的直流测试方法,并对此进行了理论分析和实验研究,该方法能快速、准确地进行BCCD沟道电势测试,确定BCCD随栅压变化的沟道电势曲线。实验结果表明,选取宽长比为11/5的NMOS管、源电流为0.01μA的测试条件,能够很好地模拟BCCD的工作状态。通过对1 024×1 024可见光BCCD进行验证测试,证实该方法可靠。DC testing methods on the channel potential of BCCD （buried channel charge coupled device） are analyzed theoretically and tested experimentally. This method can test the channel potential of BCCD quickly and accurately, so as to determine the channel potential curve with the gate voltage. Experimental results show that choosing NMOS with the ratio of width to length as 11 / 5 and the source current of 0.01μA can simulate the working conditions of BCCD perfectly. Tests on 1 024 × 1 024 visible BCCD confirm the reliability of this method.

关 键 词：BCCD 沟道电势 测试 

分 类 号：TN386.5[电子电信—物理电子学]