基于电子束曝光的微区加热技术  

Micro-Heating Technology Based on Electron Beam Lithography

作　　者：孔祥东[1] 韩立[1] 初明璋[1] 薛虹[1] 

机构地区：[1]中国科学院电工研究所,北京100190

出　　处：《纳米技术与精密工程》2011年第5期440-445,共6页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(10572078);中国博士后科学基金面上资助项目(20090460514)

摘　　要：提出了基于电子束曝光的微区加热技术.在研究样品吸收能量密度的基础上,在FEI820 Dual Beam FIB/SEM系统上对30 keV电子束曝光Pb、Bi、Sn、Al金属薄膜以及15 keV电子束曝光S1805正性抗蚀剂微结构时的微区加热效应进行了实验研究.结果表明,在一定的曝光剂量下样品表面出现了熔化现象,证明采用电子束曝光可以使某些材料微小区域表面达到相变温度或熔点以上,为使用电子束曝光技术完成某些材料的微纳区域表面热处理以及制备具有光滑曲面的微结构提供了新途径.A micro-heating technology based on electron beam lithography was presented. By studying the absorbed energy density of samples, the micro-heating effects of electron beam lithography on the surfaces of lead, bismuth, tin and aluminum films at 30 keV and on the surfaces of S1805 resist microstructures at 15 keV were experimentally investigated using FEI820 Dual Beam ＂FIB/SEM workstation. The resuits show that the surfaces were melted when electron beam doses were high enough. This phenomenon suggests that the micro-area surface temperature of metal can be raised to its melting point or phase transition point via electron beam lithography, which is potentially a new technique for micro/nano-area material surface heating and preparation of microstructures with smooth curved surfaces.

关 键 词：电子束 微区加热 吸收能量密度 剂量 表面改性 

分 类 号：TN405[电子电信—微电子学与固体电子学]