CuBi_3S_5和CuBi_3Se_5化合物的制备及其光电性质研究  

Preparation and photoelectric properties of CuBi_3S_5 and CuBi_3Se_5 compounds

作　　者：苗凤秀[1] 万松明[1] 张庆礼[1] 吕宪顺[1] 顾桂新[1] 殷绍唐[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所,安徽合肥230031

出　　处：《量子电子学报》2011年第5期558-563,共6页Chinese Journal of Quantum Electronics

基　　金：安徽省自然科学基金(070414157);中国科学院合肥物质科学研究院院长基金资助项目

摘　　要：开展了CuBi_3S_5和CuBi_3Se_5两种化合物的合成研究,并首次报道了这两种化合物的基本光电性质。以水合肼(N_2H_4·H_2O)为还原剂,以CuCl、BiCl_3和S(或Se)为原料,通过溶剂热与固相反应相结合的方法成功制备了CuBi_3S_5和CuBi_3Se_5两种化合物的多晶。采用四点探针法获得了这两种化合物的电阻随温度变化的关系,结果表明:CuBi_3Se_5呈金属性质,而CuBi_3S_5呈半导体性质。根据Arrhenius关系式计算出CuBi_3S_5室温下的热激活能为17.1 meV。在室温下对CuBi_3S_5多晶块体进行了霍尔效应实验,结果表明:其载流子浓度为3.75×10^(17)cm^(-3),霍尔迁移率为14 cm^2V^(-1)s^(-1),CuBi_3S_5为n型半导体。漫反射光谱的实验结果表明CuBi_3S_5的禁带宽度约为0.66 eV。The synthesis of CuBi3S5 and CuBi3Se5 and their basic photoelectric properties are reported for the first time. CuBi3S5 and CuBi3Se5 were prepared successfully by solvothermal method using hydrazine hydrate （N2H4-H2O） as the reductant agent in conjunction with solid state reaction method. The resistance dependence of CuBi3S5 and CuBi3 Se5 on temperature were measured by four-point probe method, the results showed that the CuBi3S5 has semiconductor nature and CuBi3Se5 has metal nature. The thermal activation energy of CuBi3S5 was about 17.1 meV calculated from Arrhenius equation. The Hall effect experiment of CuBitS5 was carried out at room temperature, its carrier concentration is about 3.75 ×1017 cm-3 and Hall mobility is about 14 cm2V-1s-1. CuBi3S5 is an n-type semiconductor. The diffuse reflectance spectroscopy indicates that the band gap of CuBi3S5 is about 0.66 eV.

关 键 词：材料 光电性质 溶剂热法 四点探针法 霍尔效应 CuBi3S5 CuBi3Se5 

分 类 号：O472.3[理学—半导体物理] O472.4[理学—物理]