Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD  

作　　者：武春波 周玉琴 李国荣 刘丰珍 

机构地区：[1]Graduate University of the Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第9期147-150,共4页半导体学报（英文版）

基　　金：Project supported by the National Key Basic Research Program of China(No.2011CBA00705);the Knowledge Innovation Project of the Chinese Academy of Sciences(No.KGCX2-YW-351).

摘　　要：Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.

关 键 词：silicon heterojunction PECVD interface properties initial transient state of plasma hydrogen plasma pre-treatment 

分 类 号：TN304.055[电子电信—物理电子学]