4H-SiC TPJBS二极管器件结构和器件仿真  

Device Structure and Simulations of 4H-SiC TPJBS Diode

作　　者：张海鹏[1,2,3] 齐瑞生[1] 王德君[2] 王勇 

机构地区：[1]杭州电子科技大学,电子信息学院射频电路与系统教育部重点实验室,浙江杭州310018 [2]大连理工大学,电子信息与电气工程学部电子科学与技术学院,辽宁大连116024 [3]杭州汉安半导体有限公司,浙江杭州310018

出　　处：《电力电子技术》2011年第9期35-37,共3页Power Electronics

基　　金：浙江省科技计划项目资助(2009C21G2040066)~~

摘　　要：4H-SiC JBS器件具有通态电压较高、泄漏电流较大、静态功耗较高等缺点。为探索改善这些缺点的理论方法和技术途径,提出一种沟槽P型PN结肖特基势垒复合4H-SiC二极管。采用Silvaco TCAD对该器件的正向导通特性和反向阻断特性进行仿真,仿真结果表明,与具有类似参数的传统4H-SiC JBS相比,该器件具有更低的通态电阻、更小的反向泄漏电流及更低的静态功耗,更适合高频大功率低功耗电力电子系统应用。The conventional 4H-SiC JBS device has a few disadvantages：high on-state voltage drop,leakage current and static power dissipation.In order to explore the theory method and technology measure to improve these disadvan-tages,a novel 4H-SiC JBS device structure with trenched P＋ anode（4H-SiC TPJBS） is proposed.Forward on-state char-acteristics and reverse block characteristics of the proposed 4H-SiC TPJBS are simulated with Silvaco TCAD.Simula-tion results indicate that the proposed 4H-SiC TPJBS is featured of lower on-state voltage drop,leakage current and static power dissipation than the conventional 4H-SiC JBS device.

关 键 词：碳化硅 功率器件 电学特性 器件仿真 

分 类 号：TN386[电子电信—物理电子学]