锆催化的碳化硅纳米线的制备及表征  

Preparation and Characterization of SiC Nanowires with Zr as Catalyst

作　　者：闫晓燕[1,2,3] 王英勇[1] 靳国强[1] 

机构地区：[1]中国科学院山西煤炭化学研究所煤转化国家重点实验室,太原030001 [2]太原科技大学材料科学与工程学院,太原030024 [3]中国科学院研究生院,北京100039

出　　处：《有机硅材料》2011年第5期297-299,共3页Silicone Material

基　　金：国家重大基础研究计划(973)项目(2011CB201405)

摘　　要：以酚醛树脂为碳源、正硅酸乙酯为硅源、硝酸锆为催化剂,通过溶胶-凝胶法和碳热还原法制备出碳化硅纳米线。用X射线衍射仪和透射电子显微镜进行了表征。结果表明,通过此法制备的碳化硅为β-SiC,具有光滑的表面、长而直的线状结构;氧化锆在低于熔点时也起到液相催化作用,为碳化硅的生长提供有利生长点。Silicon carbide nanowires were prepared by means of sol-gel and carbothermal reduction,with phenolic resin and tetraethoxysilane（TEOS） as carbon source and ethyl-orthosilicate as silicon source,respectively,and zirconium nitrate as catalyst.Then it was characterized by the X-ray diffractometer and the transmission electron microscope.The results showed that nanowires were β-SiC with long and straight structures and smooth surface;ZrO2 served as catalyst in the liquid process under its melting point,which provided beneficial growing point for SiC.

关 键 词：溶胶-凝胶法 碳化硅 碳热还原 硝酸锆 正硅酸乙酯 酚醛树脂 

分 类 号：TB383.1[一般工业技术—材料科学与工程]