新型红外非线性光学晶体LiGaTe_2的多晶合成与晶体生长  

Synthesis and Crystal Growth of Novel Infrared Nonlinear Optical Crystal LiGaTe_2

作　　者：王善朋[1] 刘贯东[1] 施琼[1] 张国栋[1] 阮华棚[1] 高泽亮[1] 董春明[1] 陶绪堂[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2011年第4期822-827,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50802054;50721002);国家重点基础研究发展计划(973)项目(2010CB630702);山东大学自主创新基金资助(2010TS076);山东省自然科学基金(ZR2010EQ010);中科院功能晶体与激光技术重点实验室开放课题(JTJG201103)

摘　　要：采用直接合成方法无法得到纯相的碲镓锂(LiGaTe2)多晶原料,因此提出了两步合成法进行LiGaTe2多晶原料合成,即先合成二元相Ga2Te3,再以Ga2Te3、Li、Te为原料按化学计量比配料在较低温度(850℃)下合成纯相的碲镓锂多晶料,并对具体的反应机理进行了讨论。对所得碲镓锂多晶料进行了XRD分析,结果显示合成的多晶为单相高纯LiGaTe2。差示扫描量热分析(DSC)表明,LiGaTe2的熔点为674.78℃。初步开展了LiGaTe2晶体的生长研究,对晶体生长结果进行了探讨。The high purity single phase polycrystalline LiGaTe2 could not be synthesized by direct synthesis method,which was synthesized by two-step synthesis process.At first binary phase Ga2Te3 was synthesized,and then LiGaTe2 polycrystalline was synthesized under lower temperature of 850 ℃ using Ga2Te3,Li and Te as raw materials for stoichiometric.The mechanism of the reaction was discussed.The XRD results shows that the powder is of high purity and single phase,and the DSC result presents that the melting point of the polycrystalline LiGaTe2 is 674.78 ℃.Meanwhiles,the crystal growth of LiGaTe2 single crystal was studied,and the results of crystal growth were analyzed.

关 键 词：碲镓锂 多晶合成 晶体生长 中红外非线性光学晶体 

分 类 号：O78[理学—晶体学]