SiO2阻挡层对电子束沉积法生长高迁移率IWO薄膜性能的影响  

Effects of SiO_2 Buffer Layer on the Properties of High Mobility IWO Thin Films Grown by Electron Beam Deposition

作　　者：任世荣[1,2] 陈新亮[1] 张存善[2] 孙建[1] 张晓丹[1] 耿新华[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,南开大学光电子薄膜器件与技术天津市重点实验室,南开大学光电信息技术科学教育部重点实验室,天津300071 [2]河北工业大学信息工程学院,天津300130

出　　处：《人工晶体学报》2011年第4期843-847,共5页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(No.2011CBA00705,2011CBA00706&2011CBA00707);天津市应用基础及前沿技术研究计划(No.09JCYBJC06900);中央高校基本科研业务费专项资金项目(No.65010341)

摘　　要：利用电子束沉积技术在玻璃衬底上制备了IWO(In2O3∶WO3)薄膜和SiO2缓冲层,并将SiO2缓冲层对IWO薄膜性能的影响作了探究。SiO2缓冲层在室温生长。SIMS测试表明:SiO2缓冲层能有效阻挡浮法玻璃中的杂质进入到IWO薄膜。实验获得的具有SiO2阻挡层的IWO薄膜的电子迁移率μ～54.5 cm.2V-.1s-1,电阻率ρ～5.86×10-4Ω.cm,电子载流子浓度n～1.95×1020 cm-3,400～1600 nm光谱区域内的平均透过率～76%。The IWO（In2O3∶WO3） thin films and SiO2 buffer layers were fabricated by electron beam deposition technique on glass substrates,the effects of SiO2 buffer layer on the properties of IWO thin films were investigated.SiO2 buffer layers were deposited at room temperature.The SIMS test showed that SiO2 buffer layer can play an important role,which blocks the impurities diffusion from the glass substrate.The highest mobility μ~54.5 cm2 · V-1·s-1 of IWO thin film was obtained at the thickness of SiO2 about 20 nm,with the resistivity ρ~5.86×10-4 Ω· cm and the carrier concentration n^1.95×1020 cm-3.The optimizing transmittance of IWO films was ~76%（including float glass,i.e.glass/SiO2/IWO） at the light wavelength between 400 to 1600 nm.

关 键 词：电子束沉积技术 SiO2阻挡层 IWO薄膜 高迁移率 

分 类 号：O484[理学—固体物理]