In_2O_3(ZnO)_m超晶格纳米线的制备和性质  

Preparation and Properties of In_2O_3(ZnO)_m Superlattice Nanowire

作　　者：刘艳芬[1] 刘晓华[1] 孙为民[1] 刘晶会[1] 

机构地区：[1]齐齐哈尔大学物理系,齐齐哈尔161006

出　　处：《人工晶体学报》2011年第4期969-972,共4页Journal of Synthetic Crystals

基　　金：黑龙江省教育厅科学技术研究项目(11541398)

摘　　要：通过热蒸发ZnO和In粉末用化学气相沉积的方法合成了一维In2O3(ZnO)m超晶格纳米线,利用场发射扫描电子显微镜、透射电子显微镜对它们的结构和成分进行了表征。结果表明,In2O3(ZnO)m超晶格纳米线是In-O层和In/Zn-O层沿着[1010]方向交替堆叠而成的。讨论了In2O3(ZnO)m超晶格纳米线形成的机制和光致发光特性。One-dimensional In2O3（ZnO）m superlattice nanowire was synthesized by chemical vapor deposition method using ZnO and In powder as raw materials.The structure and composition were characterized by field emission scanning electron microscopy,transmission electron microscopy.The results show that the In2O3（ZnO）m superlattice nanowire is formed by In-O layer and In/Zn-O layers alternately along the [101-0] direction.The In2O3（ZnO）m superlattice nanowire formation mechanism and photoluminescence properties were discussed.

关 键 词：ZnO超晶格纳米线 掺杂 化学气相沉积 

分 类 号：O614[理学—无机化学]