铌酸锂晶片的键合减薄及热释电性能研究  

Study on the pyroelectric properties of lithium niobate wafer prepared by wafer bonding and thinning

作　　者：杨绪军[1] 陈箫[2] 刘岗[1] 牛坤旺[1] 张文栋[1] 

机构地区：[1]中北大学电子测试技术国防科技重点实验室,山西太原030051 [2]中北大学信息与通信工程学院,山西太原030051

出　　处：《电子元件与材料》2011年第10期31-34,共4页Electronic Components And Materials

基　　金：国家"863"计划重大资助项目(No.2006AA040101)

摘　　要：铌酸锂(LN)作为一种热释电材料,可以被用于制作光电探测器敏感单元的敏感层,但通常LN晶片厚度为0.5 mm,远大于光电敏感单元厚度的要求,所以需要用键合减薄及抛光技术对LN晶片进行加工处理。本研究所用键合减薄技术主要包含:RZJ-304光刻胶键合、铣磨、抛光、剥离液剥离和丙酮清洗RZJ-304胶。利用该技术加工得到了面积为10 mm×10 mm,厚度为50μm,表面比较光滑,表面粗糙度为1.63 nm的LN晶片。LN晶片的热释电信号峰峰值在减薄抛光后为176 mV,是未经处理时的4倍,满足了热释电探测器敏感层的要求。Pyroelectric material lithium niobate（LN） can be used for the preparation of sensitive layer in the sensitive element of photoelectric detector.However,as the thickness of normal LN wafer,which is 0.5 mm,is much larger than the thickness of sensitive element,LN wafer need to be processed using the thinning and polishing techniques.A novel wafer bonding and thinning technique was introduced in this study,and it mainly included： wafer bonding with RZJ-304 photoresist,grinding,polishing,separating wafers with stripper and removing photoresist with acetone.LN wafer（10mm in square） with a thickness of 50 μm is prepared using this technique,and the surface of prepared LN wafer is very smooth with the surface roughness being 1.63 nm.The peak value of the pyroelectric signal of the processed LN wafer is 176 mV,which is four times that of the unprocessed wafer,fulfilling the requirements of the sensitive layer of pyroelectric detector.

关 键 词：LN晶片 键合 减薄 抛光 热释电性能 

分 类 号：TN305[电子电信—物理电子学]