非晶硅薄膜的金属诱导晶化研究现状  

Research Status on the Crystallization of Metal Induced Amorphous Silicon Films

作　　者：田跃生[1] 

机构地区：[1]宁夏职业技术学院,银川750002

出　　处：《表面技术》2011年第5期97-100,共4页Surface Technology

摘　　要：概述了非晶硅薄膜的金属诱导晶化原理,介绍了Al,Ni两种金属诱导非晶硅薄膜晶化的一般规律,详细探讨了金属诱导条件下非晶硅薄膜的本质晶化机理,旨在为非晶硅薄膜的低温成核、晶化机理研究和多晶硅薄膜的研发制备提供实验支持与理论参考。The crystallization theory of amorphous silicon film by metal induced was briefly reviewed. The general rules of A1 and Ni induced amorphous silicon film crystallization were described and the nature mechanism of metal induced amorphous silicon film crystallization was discussed. It is expected to provide experimental support and theoretical reference to study low temperature nucleation and crystallization mechanism of silicon films and fabricate polycrystalline silicon films.

关 键 词：非晶 硅薄膜 诱导晶化 

分 类 号：O484.1[理学—固体物理]