激励剪切振动模式的ZnO压电薄膜的研制  

Study on ZnO Piezoelectric Films for Shear Vibrating Mode Excitation

作　　者：晏光华[1] 陈运祥[1] 

机构地区：[1]四川压电与声光技术研究所

出　　处：《压电与声光》1990年第2期18-21,共4页Piezoelectrics & Acoustooptics

摘　　要：本文介绍用于激励剪切振动模式的ZnO压电薄膜的制备方法、性能及应用前景.采用辅助阳极环,改变基片角度等的RF平面磁控溅射技术,在低气压、高速率的溅射条件下,制备出了c轴偏离基片法线40°,声速为2830m/s,机电耦合系数达到29—32%的ZnO压电薄膜.为制作微波复合谐振器和微波声换能器提供了性能优良的新型压电薄膜材料.This paper describes the preparation method, performance and future applications of ZnO piezoelectric films for the excitation of shear vibrating mode. Using RF planar magnetron spultering technique including an auxiliary anode ring and the substrate's angle changing,the films were prepared under low pressure and high velo-city with its c-axis 40° from the substrate normal, 2 830m/s acoustic velocity and 29-32% electromechanical coupling coefficient. This new piezoelectric film is an excellent material for microwave composite resonator and acoustic transducer.

关 键 词：ZNO 压电薄膜 激劢 剪切波 振动 

分 类 号：TN304.21[电子电信—物理电子学]