Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi_2 layer synthesized by ion implantation  

作　　者：谭海仁 游经碧 张曙光 高红丽 尹志岗 白一鸣 张秀兰 张兴旺 屈盛 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences [2]Eoplly New Energy Technology Co.Ltd.

出　　处：《Journal of Semiconductors》2011年第10期10-13,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61076051);the Beijing Natural Science Foundation(No. 2102042)

摘　　要：The calculation results of the surface plasmon(SP) energy and Purcell factor of ZnO/NiSi2demonstrate the possibility of using NiSi2to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2layers synthesized by ion implantation,and the roughness of the NiSi2layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.The calculation results of the surface plasmon（SP） energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2 layers synthesized by ion implantation,and the roughness of the NiSi2 layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2 layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.

关 键 词：ZnO film surface plasmon NiSi2 PHOTOLUMINESCENCE 

分 类 号：O472.3[理学—半导体物理]