高压下WSe_2的电学性质及金属化相变  

Electrical Properties and Metallization of WSe_2 under High Pressure

作　　者：刘鲍[1,2] 彭刚[2] 吴宝嘉[3] 

机构地区：[1]东北电力大学理学院,吉林吉林132012 [2]吉林大学超硬材料国家重点实验室,长春130012 [3]延边大学理学院,吉林延吉133002

出　　处：《吉林大学学报（理学版）》2011年第5期929-931,共3页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金(批准号:50772041;50772043;10874053;11074094;50802033);国家重点基础研究发展计划973项目基金(批准号:2011CB808204);吉林省"十一五"科学技术研究计划项目(批准号:200927)

摘　　要：利用高压原位电阻率测量技术,观察0～48.2 GPa内WSe2电阻率随压强的变化规律,并测量了WSe2电阻率在不同压强下随温度的变化关系.结果表明:WSe2电阻率在压力作用下的变化规律与杂质能级压致离化后的传导有关;由于压致能隙闭合,WSe2在38.1 GPa时发生等结构的半导体性到金属性的相转变.The pressure dependence of electrical resistivity of WSe2 was observed by means of in situ high pressure electrical resistivity measurement in a range of 0—48.2 GPa.The temperature dependence of the electrical resistivity of WSe2 was measured under different pressures.The results show that the pressure response of the electrical resistivity of WSe2 was associated with the conduction of pressure-induced ionization of impurity levels;owing to the pressure induced band gap closure,WSe2 sample underwent an isostructural semiconductor-metal phase transition at 38.1 GPa.

关 键 词：硒化钨 高压 电阻率 金属化 

分 类 号：O521[理学—高压高温物理]