半导体器件模拟方法研究  

The Research of Semiconductor Device Simulation

作　　者：刘影[1] 丁红梅[1] 

机构地区：[1]电子科技大学物理电子学院,四川成都610054

出　　处：《大众科技》2011年第10期11-12,8,共3页Popular Science & Technology

摘　　要：主要介绍了半导体器件模拟中的几种物理模型和三角形网格自适应划分的算法。并以泊松方程为例,介绍了如何在网格中进行方程的离散化,以及后期计算方程组的几种数值方法并比较各种算法的优缺点,同时得到解的示意图。Study of Semiconductor device simulation method are reviewed in the paper. Such as physical models, algorithm of refining mesh, and numerical methods. The discretization of the Poison equation on triangle grids is illustrated. And also describe some numerical methods commonly used for solution of nonlinear equation. And also get the solutions＇ diagrammatic sketch.

关 键 词：半导体器件 器件模拟 网格划分 数值计算 

分 类 号：TN303[电子电信—物理电子学]