Broadband non-polarizing beam splitter based on guided mode resonance effect  

作　　者：麻健勇 许程 强颖怀 朱亚波 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences [2]School of Materials Science and Engineering, China University of Mining and Technology

出　　处：《Chinese Physics B》2011年第10期272-276,共5页中国物理B（英文版）

基　　金：supported by the Youth Science Research Foundation of China University of Mining and Technology (Grant No. 2009A058);the Natural Science Foundation of Shanghai Committee of Science and Technology (Grant No. 10ZR1433500)

摘　　要：A broadband non-polarizing beam splitter （NPBS） operating in the telecommunication C＋L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator （SOI） elements. It is shown that this double layer SOI structure can provide ~50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4μm-l.7 μm and i% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.A broadband non-polarizing beam splitter （NPBS） operating in the telecommunication C＋L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator （SOI） elements. It is shown that this double layer SOI structure can provide ~50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4μm-l.7 μm and i% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.

关 键 词：non-polarizing beam splitter guided mode resonance SILICON-ON-INSULATOR rigorouscoupled-wave analysis 

分 类 号：TN256[电子电信—物理电子学]