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作 者:牛晨亮[1] 王健[2] 王建峰[2] 师巨亮[2] 韩颖[2] 夏英杰[2] 孙保瑞[2]
机构地区:[1]专用集成电路重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《微纳电子技术》2011年第10期634-638,共5页Micronanoelectronic Technology
摘 要:利用Airy函数代换与传输矩阵方法精确计算了有外加偏压下电子在共振声子太赫兹量子级联激光器有源区单个周期内的透射系数与波函数,得到了不同偏压下的电子波函数分布以及准束缚态能级位置与外加偏压的关系曲线。在仿真计算的基础上设计了一种共振声子太赫兹量子级联激光器的有源区结构。计算结果表明,对于设计的结构,当单个周期两端的外加偏压为45 mV时达到太赫兹工作点。此时,发射区内E3能级和E2能级对应的波函数能够交叠,相应发射波属于太赫兹频段,波长为98.0μm,频率为3.05 THz。电子在弛豫区内E2和E1能级间跃迁发出的能量为36.0 meV,与GaAs的纵向光学声子能量(36 meV)相同,有利于粒子数反转。The transmission coefficients and wave function of the electron in the single period (SP) of the resonant phonon (RP) terahertz quantum cascade laser active region were calculated with the bias voltage by Airy function formulism and transmission matrix methods. The electron wave function with different bias voltages and relationship curve of the quasi-bound level (sub-band) and bias voltage were gotten. Based on the simulation calculation results, an active region structure of the RP THz QCL was designed. The calculation results show that the THz lasing appears when the bias voltage of two terminals in the SP structure is 45 mV. The wave function overlap between E3 and E2 appears in the radiation region. The related lasing wave is within THz range, the wavelength is 98.0 μm and the frequency is 3.05 THz. The transition energy from E2 to E1 in the relaxation region is 36.0 meV, the same as the longitudinal optical (LO) phonon energy (36 meV in GaAs). It is beneficial to achieve large population inversion.
关 键 词:太赫兹量子级联激光器(THz QCL) 共振声子(RP) 粒子数反转 Airy函数代换 传输矩阵方法
分 类 号:TN248.4[电子电信—物理电子学]
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