多晶硅太阳电池表面绒面制备工艺优化  

Optimization of preparing technology for acidic texturing of multicrystalline silicon solar cells

作　　者：张发云[1] 李水根[1] 

机构地区：[1]新余学院新能源科学与工程学院,江西新余338000

出　　处：《电源技术》2011年第10期1246-1248,共3页Chinese Journal of Power Sources

基　　金：2010年江西省教育厅科技项目(GJJ10647);2009年江西省高校省级教改项目(JXJG-09-24-2);2009年校级招标课题资助项目

摘　　要：采用各向同性腐蚀法制备多晶硅绒面,利用正交实验法研究了不同腐蚀液配方中的HNO3、HF和缓和剂NaH2PO4·2H2O的含量对多晶硅太阳电池绒面的反射率和腐蚀速度的影响。结果表明:NaH2PO4.2 H2O溶液对腐蚀速度有着显著的影响,其次为HF溶液和HNO3溶液;对于反射率来说,其影响因素的重要性主次顺序为HF溶液、HNO3溶液、NaH2PO4·2 H2O缓和剂。在本实验条件下,最佳的酸腐蚀混合液配方为HF∶HNO3∶NaH2PO4.2 H2O=9∶1∶7,在该工艺条件下,制备的硅片绒面腐蚀坑较为均匀,反射率为17%左右。Texturing of multicrystaltine silicon was prepared by isotropic acidic etching in this paper. The reflectance and etching rate of texturing of multicrystalline silicon solar cell with orthogonal experiment were studied to investigate the effects of content of HNO3, HF and NaH2PO4.2 H2O under different formula of etching solution. The results reveal that NaH2PO4.2 H2O solution has a remarkable effect on the etching rate, then HF solution is the most important factors for reflectance, the second are HF and HNO3 solutions. The primary-secondary order of affect factors are HF, HNO3 and NaH2PO4O2 H2O solution for reflectance. In this experiment, the optimal proportion of acidic etching mixture solution was HF ： HNO3 ： NaH2PO4.2 H2O = 9 ： 1 ： 7. Under the process condition, texturing of multicrystalline silicon was fabricated with more uniform etch pit with reflectance of around 17%.

关 键 词：多晶硅 酸腐蚀 绒面 反射率 

分 类 号：TM615[电气工程—电力系统及自动化]