利用键合线提高ESD保护电路射频性能的研究  

Research of Improving Radio-Frequency Performance of ESD Protection Circuit by Bonding Wire

作　　者：杨涛[1] 李昕[1] 陶煜[1] 陈良月[1] 高怀[1,2] 

机构地区：[1]东南大学苏州研究院高频高功率器件与集成技术研究中心,江苏苏州215123 [2]东南大学国家ASIC系统工程中心,南京210096

出　　处：《半导体技术》2011年第10期804-808,共5页Semiconductor Technology

基　　金：江苏省科技支撑计划工业部分重点项目(BE2010129)

摘　　要：提出了一种利用键合线提高ESD保护电路射频性能的新型片外ESD保护电路结构。该新型结构在不降低ESD保护电路抗静电能力前提下,提高了ESD保护电路射频性能。针对一款达林顿结构ESD保护电路,制作了现有ESD保护电路结构和新型ESD保护电路结构的测试板级电路,测试结果表明:两种ESD保护电路结构的抗静电能力均达到20 kV,现有ESD保护电路结构在0～4.3 GHz频段内衰减系数均小于1 dB,反射损耗系数均小于-10 dB,最高工作频率为4.3 GHz;新型ESD保护电路结构在0～5.6 GHz频段内衰减系数均小于1 dB,反射损耗系数均小于-10 dB,最高工作频率为5.6 GHz。A novel off-chip ESD protection circuit structur e was proposed to impr ove the radio-frequency performance of ESD protection circuit using bonding wir e.The novel structure can improve the radio-frequency performance without decr e a sing the electrostatic prevention ability.The test circuits of both current an d novel ESD protection circuit structures were completed,according to the ESD pr otection circuit of Darlington structure.The results show that the electrostat i c prevention ability of the two structures are both up to 20 kV.The current ES D protection circuit structure exhibits an attenuation coefficient of less than 1 dB and a reflection coefficient of less than-10 dB while operated over the freq uency range from DC to 4.3 GHz,and its maximum operating frequency is 4.3 GHz. The novel circuit structure exhibits an attenuation coefficient of less than 1dB and a reflection coefficient of less-10 dB while operated over the frequen cy range from DC to 5.6 GHz,and its maximum operating frequency is 5.6 GHz.

关 键 词：ESD保护电路 键合线 新型结构 抗静电能力 射频性能 

分 类 号：TN305.96[电子电信—物理电子学]